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RU30C30M Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU30C30M
Manufacturer Ruichips
File Size 422.22 KB
Description N-Channel Advanced Power MOSFET
Download RU30C30M Download (PDF)

General Description

D1 D1D2D2 S1 G1 S2 G2 pin1 PDFN5060 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pu

Overview

RU30C30M Complementary Advanced Power MOSFET.

Key Features

  • N-Channel 30V/30A, RDS (ON) =7.5mΩ(Typ. ) @ VGS=10V RDS (ON) =10mΩ(Typ. ) @ VGS=4.5V.
  • P-Channel -30V/-30A, RDS (ON) =13mΩ (Typ. ) @ VGS=-10V RDS (ON) =22mΩ (Typ. ) @ VGS=-4.5V.
  • Fast Switching Speed.
  • ESD Protected.
  • Low gate Charge.
  • Lead Free and Green Devices Available (RoHS Compliant).

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