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RU3582S - N-Channel Advanced Power MOSFET

General Description

TO-263 Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 40 ±20 175 -55 to 175 TC=25°C 100 400 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source

Key Features

  • 40V/100A, RDS (ON) =5mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.

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Datasheet Details

Part number RU3582S
Manufacturer Ruichips
File Size 289.10 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU3582S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU3582S N-Channel Advanced Power MOSFET MOSFET Features • 40V/100A, RDS (ON) =5mΩ (Typ.