Datasheet4U Logo Datasheet4U.com

RU35122S - N-Channel Advanced Power MOSFET

Description

TO-263 Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperatur

Features

  • 40V/120A, RDS (ON) =2.7mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.

📥 Download Datasheet

Datasheet preview – RU35122S

Datasheet Details

Part number RU35122S
Manufacturer Ruichips
File Size 295.68 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU35122S Datasheet
Additional preview pages of the RU35122S datasheet.

📁 Similar Datasheet

  • RU3520H - N-Channel 40V MOSFET (VBsemi)
  • RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
  • RU3 - Silicon And Fast Recovery Rectifiers (WEJ)
  • RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3060L - N-Channel MOSFET (VBsemi)
  • RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU30E4B - N-Channel MOSFET (VBsemi)
  • RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
Other Datasheets by Ruichips
  • RU35122R - N-Channel Advanced Power MOSFET
  • RU3520H - N-Channel Advanced Power MOSFET
  • RU3560L - N-Channel Advanced Power MOSFET
  • RU3568L - N-Channel Advanced Power MOSFET
  • RU3568R - N-Channel Advanced Power MOSFET
  • RU3582R - N-Channel Advanced Power MOSFET
  • RU3582S - N-Channel Advanced Power MOSFET
  • RU30100L - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU35122S N-Channel Advanced Power MOSFET MOSFET Features • 40V/120A, RDS (ON) =2.7mΩ (Typ.
Published: |