RU3568R - N-Channel Advanced Power MOSFET

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

30V/68A, RDS (ON) =6mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU3568R
Manufacturer	Ruichips
File Size	298.95 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU3568R Datasheet
Additional preview pages of the RU3568R datasheet.

📁 Similar Datasheet

RU3520H - N-Channel 40V MOSFET (VBsemi)
RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
RU3 - Silicon And Fast Recovery Rectifiers (WEJ)
RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3060L - N-Channel MOSFET (VBsemi)
RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
RU30E4B - N-Channel MOSFET (VBsemi)
RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)

Other Datasheets by Ruichips

RU3568L - N-Channel Advanced Power MOSFET
RU3560L - N-Channel Advanced Power MOSFET
RU35122R - N-Channel Advanced Power MOSFET
RU35122S - N-Channel Advanced Power MOSFET
RU3520H - N-Channel Advanced Power MOSFET
RU3582R - N-Channel Advanced Power MOSFET
RU3582S - N-Channel Advanced Power MOSFET
RU30100L - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU3568R N-Channel Advanced Power MOSFET MOSFET Features • 30V/68A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.

Published: Apr 10, 2017 |