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RU40L10H Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU40L10H
Manufacturer Ruichips
File Size 304.08 KB
Description P-Channel Advanced Power MOSFET
Download RU40L10H Download (PDF)

General Description

SOP-8 Applications • DC-DC Converter.

Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID PD ② RθJA Continuous Drain Current(VGS=-10V) TC=25°C TC=70°C Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Rating -40 ±20 150 -55 to 150 -9.5 ① -38 -9.5 -8 3.1 2.0 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

C– OCT., 2011 www.ruichips

Overview

RU40L10H P-Channel Advanced Power MOSFET MOSFET.

Key Features

  • -40V/-9.5A, RDS (ON) =19mΩ (Typ. ) @ VGS=-10V RDS (ON) =30mΩ (Typ. ) @ VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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