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RU40P3C - P-Channel Advanced Power MOSFET

Description

D G S SOT23-3 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ①

Features

  • -40V/-3A, RDS (ON) =100mΩ(Typ. )@VGS=-10V RDS (ON) =150mΩ(Typ. )@VGS=-4.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU40P3C
Manufacturer Ruichips
File Size 317.16 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU40P3C Datasheet
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Full PDF Text Transcription

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RU40P3C P-Channel Advanced Power MOSFET Features • -40V/-3A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =150mΩ(Typ.)@VGS=-4.
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