RU40P3C - P-Channel Advanced Power MOSFET

Description

D G S SOT23-3 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ①

Features

-40V/-3A, RDS (ON) =100mΩ(Typ. )@VGS=-10V RDS (ON) =150mΩ(Typ. )@VGS=-4.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU40P3C
Manufacturer	Ruichips
File Size	317.16 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU40P3C Datasheet
Additional preview pages of the RU40P3C datasheet.

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Full PDF Text Transcription

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RU40P3C P-Channel Advanced Power MOSFET Features • -40V/-3A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =150mΩ(Typ.)@VGS=-4.

Published: Apr 26, 2016 |