RU4953BH mosfet equivalent, p-channel advanced power mosfet.
* -30V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =70mΩ(Typ.)@VGS=-4.5V
* Low On-Resistance
* Super High Dense Cell Design
* Reliable and Rugged
* Le.
*Power management
*LED Driver
*Battery protection
Pin Description
D2 D2 D1 D1
G2 S2
G1
pin1
S1
SOP-8
.
D2 D2 D1 D1
G2 S2
G1
pin1
S1
SOP-8
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Ran.
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