RU4H10P mosfet equivalent, n-channel advanced power mosfet.
* 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V
* Gate charge minimized
* Low Crss( Typ. 18pF)
* Extremely high dv/dt capability
* 100% avalanche tested .
* High efficiency switch mode power supplies
* Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Par.
TO-220F
Applications
* High efficiency switch mode power supplies
* Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Volta.
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