RU60101R mosfet equivalent, n-channel advanced power mosfet.
* 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* Low Gate Charge
* 100% avalanche tested
* Lead .
* Switching Application Systems
* Inverter Systems
Pin Description
TO-220 N-Channel MOSFET
Absolute Maximum Ra.
TO-220 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode C.
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