RU60101R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU60101R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU60101R
Manufacturer	Ruichips
File Size	297.49 KB
Description	N-Channel Advanced Power MOSFET
Download	RU60101R Download (PDF)

General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– JUN., 20

Overview

RU60101R N-Channel Advanced Power MOSFET MOSFET.

Key Features

60V/100A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
Low Gate Charge.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

More Datasheets from Ruichips

Part Number	Description
RU60100R	N-Channel Advanced Power MOSFET
RU60120R	N-Channel Advanced Power MOSFET
RU60190R	N-Channel Advanced Power MOSFET
RU60200R	N-Channel Advanced Power MOSFET
RU60280R	N-Channel Advanced Power MOSFET
RU602B	N-Channel Advanced Power MOSFET
RU60450Q	N-Channel Advanced Power MOSFET
RU6050L	N-Channel Advanced Power MOSFET
RU6050R	N-Channel Advanced Power MOSFET
RU6050S	N-Channel Advanced Power MOSFET