Description
TO-220 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy,
Features
- 60V/130A, RDS (ON) =4mΩ (Typ. ) @VGS=10V.
- Ultra Low On-Resistance.
- Exceptional dv/dt capability.
- Fast Switching and Fully Avalanche Rated.
- 100% avalanche tested.
- 175°C Operating Temperature.
- Lead Free and Green Available.
RU60100R Datasheet
