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RU60101R - N-Channel Advanced Power MOSFET

General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

Key Features

  • 60V/100A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • Low Gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU60101R
Manufacturer Ruichips
File Size 297.49 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU60101R Datasheet

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RU60101R N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, RDS (ON) =7mΩ(Typ.