Description
TO-220 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
A
Features
- 60V/100A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
- Super High Dense Cell Design.
- Ultra Low On-Resistance.
- Low Gate Charge.
- 100% avalanche tested.
- Lead Free and Green Devices Available (RoHS Compliant).
RU60101R Datasheet
