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RU7H2K - N-Channel Advanced Power MOSFET

Description

Applications High efficiency switch mode power supplies TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continu

Features

  • 700V/2A, RDS (ON) =5000mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Fast Switching.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU7H2K
Manufacturer Ruichips
File Size 247.14 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU7H2K Datasheet
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Full PDF Text Transcription

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RU7H2K N-Channel Advanced Power MOSFET Features • 700V/2A, RDS (ON) =5000mΩ(Typ.
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