RU7080L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU7080L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU7080L
Manufacturer	Ruichips
File Size	313.69 KB
Description	N-Channel Advanced Power MOSFET
Download	RU7080L Download (PDF)

General Description

D Applications • Power Supply G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 70 ±25 175 -55 to 175 80 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 320 A 80 A 56 125 W 62.5 1.2 °C/W 100 °C/W 225 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 www.ruichips.com RU7080L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU7080L Min.

Typ.

Overview

RU7080L N-Channel Advanced Power MOSFET.

Key Features

70V/80A, RDS (ON) =5.7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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