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RU7085R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU7085R
Manufacturer Ruichips
File Size 296.47 KB
Description N-Channel Advanced Power MOSFET
Download RU7085R Download (PDF)

General Description

TO-220 Applications • Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 Rating 70 ±25 175 -55 to 175 ① 85 ② 340 ① 85 63 125 62.5 1.2 Unit V °C °C A A A W W °C/W 256 mJ www.ruichips.com RU7085R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU7085R Unit Min.

Typ.

Overview

RU7085R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 70V/85A, RDS (ON) =6mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.