• Part: K1B3216BDD
  • Manufacturer: SAMSUNG ELECTRONICS
  • Size: 790.36 KB
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K1B3216BDD Key Features

  • Software Control Supports Driver Strength Optimization for system environment Supports Async. 4-Page Read / Async. Write
  • Supports Sync. Burst Read / Sync. Burst Write Mode
  • Supports 4 word / 8 word / 16 word burst Length
  • Supports Linear(Wrap) Burst type
  • Supports Burst Read Suspend
  • Supports Burst Write Data Masking by /UB & /LB control
  • Supports WAIT function to indicate data availability
  • Max. Burst Clock Frequency : 66MHz
  • Package Type : 54 FBGA 6.00 x 8.00

Other K1B3216BDD Datasheets

Manufacturer Part Number Description
Samsung Semiconductor Logo Samsung Semiconductor K1B3216BDD 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM

View all K1B3216BDD datasheets →

K1B3216BDD Description

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance.