K1B3216BDD - 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

General Description

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data.

SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.

Key Features

www. DataSheet4U. com UtRAM.

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K1B3216BDD 2mx16 bit synchronous burst uni-transistor random access memory by SAMSUNG ELECTRONICS - Datasheet Preview

Datasheet Details

Part number	K1B3216BDD
Manufacturer	SAMSUNG ELECTRONICS
File Size	790.36 KB
Description	2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Datasheet	K1B3216BDD Datasheet

Full PDF Text Transcription for K1B3216BDD (Reference)

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K1B3216BDD Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draf...

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eet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Draft Date Remark September 02, 2004 Preliminary 0.1 Revised - Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’ on page.2 and page.42 Finalize November 01, 2004 Preliminary 1.0 April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.

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