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SW226N - N-Channel MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 2.3 Ω)@VGS=10V.
  • Gate Charge (Typical 30nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General.

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Datasheet Details

Part number SW226N
Manufacturer SAMWIN
File Size 455.07 KB
Description N-Channel MOSFET
Datasheet download datasheet SW226N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN TO-251 TO-252 SW226N N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.3ohm 1 2 3 1 2 3 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 30nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.