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SW730 - N-Channel MOSFET

SAMWIN

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Datasheet Details

Part number	SW730
Manufacturer	SAMWIN
File Size	823.62 KB
Description	N-Channel MOSFET
Datasheet	SW730_SAMWIN.pdf

SW730 Product details

Features

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.0 ohm : 6.0 A : 32 nc : 73 W SW730 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also l.

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Published: Oct 18, 2006 |