SW70N10V Description
1 This power MOSFET is produced with advanced technology of SAMWIN. 3 This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics. Drain current is limited by junction temperature.
SW70N10V Key Features
- High ruggedness
- Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V
- Low Gate Charge (Typ 117nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification