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SW70N10V - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

Avalanche characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V Low RDS(ON) (Typ 11.7mΩ)@VGS=10V.
  • Low Gate Charge (Typ 117nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW70N10V

Datasheet Details

Part number SW70N10V
Manufacturer Samwin
File Size 761.84 KB
Description N-channel MOSFET
Datasheet download datasheet SW70N10V Datasheet
Additional preview pages of the SW70N10V datasheet.

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Full PDF Text Transcription

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SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V Low RDS(ON) (Typ 11.7mΩ)@VGS=10V  Low Gate Charge (Typ 117nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-251 TO-252 TO-220 1 2 3 1 2 3 1 23 1. Gate 2. Drain 3. Source BVDSS : 95V ID : 70A RDS(ON) : 12.4mΩ @VGS=4.5V 11.7mΩ @VGS=10V 2 General Description 1 This power MOSFET is produced with advanced technology of SAMWIN. 3 This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics.
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