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SW7N60A - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 1.3 Ω)@VGS=10V.
  • Gate Charge (Typ 38nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.0A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW7N60A

Datasheet Details

Part number SW7N60A
Manufacturer SAMWIN
File Size 838.24 KB
Description N-channel MOSFET
Datasheet download datasheet SW7N60A Datasheet
Additional preview pages of the SW7N60A datasheet.

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Full PDF Text Transcription

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SAMWIN SW7N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.0A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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