Datasheet4U Logo Datasheet4U.com

SW7N65DA - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 1.4Ω)@VGS=10V.
  • Low Gate Charge (Typ 25nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

📥 Download Datasheet

Datasheet preview – SW7N65DA

Datasheet Details

Part number SW7N65DA
Manufacturer Samwin
File Size 918.16 KB
Description N-channel MOSFET
Datasheet download datasheet SW7N65DA Datasheet
Additional preview pages of the SW7N65DA datasheet.

📁 Similar Datasheet

  • SW7N65B - N-channel TO-220F MOSFET (SEMIPOWER)
  • SW7N60D - N-Channel MOSFET (SEMIPOWER)
  • SW7N60H - MOSFET (SEMIPOWER)
  • SW7N60K - MOSFET (SEMIPOWER)
  • SW7N60R - MOSFET (SEMIPOWER)
  • SW7N90 - N-CHANNEL POWER MOSFET (SEMIWILL)
  • SW7125D - Ultra-Low Noise Amplifier (SILICON wave)
  • SW7126D - Ultra-Low Noise Amplifier (SILICON wave)
  • SW7135 - Fully-integrated Front-End Module (SILICON wave)
  • SW7201 - I2C Buck-Boost Charge-Discharge Controller (ISMARTWARE)
Other Datasheets by Samwin

Full PDF Text Transcription

Click to expand full text
SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charge, PC Power TO-251N TO-262N TO-252 1 23 1 23 1 23 BVDSS : 650V ID : 7A RDS(ON) : 1.4Ω 2 1 General Description 1. Gate 2. Drain 3. Source 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Published: |