SEMIPOWER SW7N60D
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW7N60D |
|---|---|
| Datasheet | SW7N60D Download |
| Manufacturer |  SEMIPOWER |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
TO-220F TO-220 TO-251 TO-252● High ruggedness
● Low RDS(ON) (Typ 1.05Ω)@VGS=10V
● Low Gate Charge (Typ 30nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application:UPS，Inverter， TV-POWER 1 23 1 23 1 23 1 23 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
Order Codes BVDSS : 600V ID : 7A RDS(ON) : 1.05Ω 2 1 3 Item Sales Type 1 SW F 7N60D 2 SW P 7N60D 3 SW I 7N60D 4 SW D 7N60D Marking SW7N60D SW7N60D SW7N60D SW7N60D Package TO-220F TO-220 TO-251 TO-252 Packaging TUBE TUBE TUBE REEL Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy (note 1) (note 2) (note 1) Peak diode Recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
