SW7N60D - N-Channel MOSFET

SEMIPOWER

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-220F TO-220 TO-251 TO-252.
High ruggedness.
Low RDS(ON) (Typ 1.05Ω)@VGS=10V.
Low Gate Charge (Typ 30nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW7N60D n-channel mosfet by SEMIPOWER - Datasheet Preview

Datasheet Details

Part number	SW7N60D
Manufacturer	SEMIPOWER
File Size	1.00 MB
Description	N-Channel MOSFET
Datasheet	SW7N60D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 1.05Ω)@VGS=10V  Low Gate Charge (Typ 30nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:UPS，Inverter， TV-POWER 1 23 1 23 1 23 1 23 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 7A RDS(ON) : 1.