SW7N60D Overview
Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Key Features
- High ruggedness
- Low RDS(ON) (Typ 1.05Ω)@VGS=10V
- Low Gate Charge (Typ 30nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
