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SAMWIN
SW7N60K
N-channel TO-220F/I-PAK MOSFET
Features
TO-220F
TO-251
■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
12 3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V ID : 7.0A RDS(ON) :0.
SW7N60K Datasheet
