SW7N60K Overview
Description
Source This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in low on resistance.
Key Features
- High ruggedness
- RDS(ON) (Max 0.6Ω)@VGS=10V
- Gate Charge (Typical 21nC)
- Improved dv/dt Capability
