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SW7N60K - MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-220F TO-251.
  • High ruggedness.
  • RDS(ON) (Max 0.6Ω)@VGS=10V.
  • Gate Charge (Typical 21nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 12 3 General.

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Datasheet preview – SW7N60K

Datasheet Details

Part number SW7N60K
Manufacturer SEMIPOWER
File Size 642.84 KB
Description MOSFET
Datasheet download datasheet SW7N60K Datasheet
Additional preview pages of the SW7N60K datasheet.

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Full PDF Text Transcription

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SAMWIN SW7N60K N-channel TO-220F/I-PAK MOSFET Features TO-220F TO-251 ■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in low on resistance. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 7.0A RDS(ON) :0.
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