SW7N65B Overview
Description
Source This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Key Features
- High ruggedness
- RDS(ON) (Max 1.4 Ω)@VGS=10V
- Gate Charge (Typical 19nC)
- Improved dv/dt Capability
