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SW7N65B - N-channel TO-220F MOSFET

General Description

1.

Gate 2.

Drain 3.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 1.4 Ω)@VGS=10V.
  • Gate Charge (Typical 19nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F SW7N65B N-channel TO-220F MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.4 ohm 1 2 3 1 3 2 General.

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Datasheet Details

Part number SW7N65B
Manufacturer SEMIPOWER
File Size 501.25 KB
Description N-channel TO-220F MOSFET
Datasheet download datasheet SW7N65B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F SW7N65B N-channel TO-220F MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.4 ohm 1 2 3 1 3 2 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.