SW7N65B Datasheet | SEMIPOWER

SAMWIN Features - High ruggedness - RDS(ON) (Max 1.4 Ω)@VGS=10V - Gate Charge (Typical 19nC) - Improved dv/dt Capability - 100% Avalanche Tested TO-220F N-channel TO-220F MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.4 ohm 1 2 3 1 3 2 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 Sales Type SW F 7N65B...