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SAMWIN
SW7N60H
N-channel TO-220F MOSFET
Features
TO-220F
■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V ID : 7A RDS(ON) :1.
SW7N60H Datasheet
