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SW7N60H - MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-220F.
  • High ruggedness.
  • RDS(ON) (Max 1.32Ω)@VGS=10V.
  • Gate Charge (Typical 28nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 General.

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Datasheet preview – SW7N60H

Datasheet Details

Part number SW7N60H
Manufacturer SEMIPOWER
File Size 513.13 KB
Description MOSFET
Datasheet download datasheet SW7N60H Datasheet
Additional preview pages of the SW7N60H datasheet.

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Full PDF Text Transcription

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SAMWIN SW7N60H N-channel TO-220F MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 7A RDS(ON) :1.
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