SW7N60R - MOSFET

SEMIPOWER

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-220.
High ruggedness.
RDS(ON) (Max1.25Ω)@VGS=10V.
Gate Charge (Typical 19nC).
Improved dv/dt Capability.
100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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SW7N60R mosfet by SEMIPOWER - Datasheet Preview

Datasheet Details

Part number	SW7N60R
Manufacturer	SEMIPOWER
File Size	640.00 KB
Description	MOSFET
Datasheet	SW7N60R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 7A RDS(ON) :1.