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SW7N60R - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220.
  • High ruggedness.
  • RDS(ON) (Max1.25Ω)@VGS=10V.
  • Gate Charge (Typical 19nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW7N60R

Datasheet Details

Part number SW7N60R
Manufacturer SEMIPOWER
File Size 640.00 KB
Description MOSFET
Datasheet download datasheet SW7N60R Datasheet
Additional preview pages of the SW7N60R datasheet.

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Full PDF Text Transcription

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SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 7A RDS(ON) :1.
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