SEMIPOWER SW7N60R
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW7N60R |
|---|---|
| Datasheet | SW7N60R Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
TO-220● High ruggedness
● RDS(ON) (Max1.25Ω)@VGS=10V
● Gate Charge (Typical 19nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 7A RDS(ON) :1.25Ω 2 1 3 Order Codes Item 1 Sales Type SW P 7N60 Marking SW7N60R Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Sin
