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SW7N60 - N-Channel MOSFET

Description

This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • N-Channel MOSFET.
  • BVDSS (Minimum).
  • RDS(ON) (Maximum).
  • ID.
  • Qg (Typical).
  • PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W SW7N60 General.

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Datasheet preview – SW7N60

Datasheet Details

Part number SW7N60
Manufacturer SAMWIN
File Size 443.61 KB
Description N-Channel MOSFET
Datasheet download datasheet SW7N60 Datasheet
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www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W SW7N60 General Description This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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