SW7N65K2 Overview
Description
Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Key Features
- High ruggedness
- Low RDS(ON) (Typ 0.57Ω)@VGS=10V
- Low Gate Charge (Typ 14.5nC)
- Improved dv/dt Capability
- 100% Avalanche Tested 1
