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SW7N65K2 - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-220F TO-251 TO-251N TO-252.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.57Ω)@VGS=10V.
  • Low Gate Charge (Typ 14.5nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1.

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Datasheet preview – SW7N65K2

Datasheet Details

Part number SW7N65K2
Manufacturer Samwin
File Size 1.06 MB
Description N-channel MOSFET
Datasheet download datasheet SW7N65K2 Datasheet
Additional preview pages of the SW7N65K2 datasheet.

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Full PDF Text Transcription

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SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252  High ruggedness  Low RDS(ON) (Typ 0.57Ω)@VGS=10V  Low Gate Charge (Typ 14.5nC)  Improved dv/dt Capability  100% Avalanche Tested 1  Application: Charge,LED,PC Power 2 3 1 2 3 1 2 3 1 2 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 7A RDS(ON) : 0.
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