SW7N65K2 - N-channel MOSFET

Samwin

General Description

Gate 2.

Drain 3.

Key Features

TO-220F TO-251 TO-251N TO-252.
High ruggedness.
Low RDS(ON) (Typ 0.57Ω)@VGS=10V.
Low Gate Charge (Typ 14.5nC).
Improved dv/dt Capability.
100% Avalanche Tested 1.

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SW7N65K2 n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW7N65K2
Manufacturer	Samwin
File Size	1.06 MB
Description	N-channel MOSFET
Datasheet	SW7N65K2 Datasheet

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Full PDF Text Transcription (Reference)

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SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252  High ruggedness  Low RDS(ON) (Typ 0.57Ω)@VGS=10V  Low Gate Charge (Typ 14.5nC)  Improved dv/dt Capability  100% Avalanche Tested 1  Application: Charge,LED,PC Power 2 3 1 2 3 1 2 3 1 2 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 7A RDS(ON) : 0.