SW7N65K Description
Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW7N65K Key Features
- High ruggedness
- Low RDS(ON) (Typ 0.5Ω)@VGS=10V
- Low Gate Charge (Typ 21nC)
- Improved dv/dt Capability