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SW730 Datasheet N-channel MOSFET

Manufacturer: SAMWIN

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Datasheet Details

Part number SW730
Manufacturer SAMWIN
File Size 823.62 KB
Description N-Channel MOSFET
Datasheet SW730_SAMWIN.pdf

Key Features

  • N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.0 ohm : 6.0 A : 32 nc : 73 W SW730 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also l.

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SW730 Distributor