SW730 - N-Channel MOSFET

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SAMWIN

Part number	SW730
Manufacturer	SAMWIN
File Size	823.62 KB
Description	N-Channel MOSFET
Datasheet	SW730 Datasheet
Additional preview pages of the SW730 datasheet.

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.0 ohm : 6.0 A : 32 nc : 73 W SW730 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also l.

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Published: Oct 18, 2006 |