SW830 - N-Channel MOSFET

Product Overview

SAMWIN

Part number	SW830
Manufacturer	SAMWIN
File Size	859.08 KB
Description	N-Channel MOSFET
Datasheet	SW830 Datasheet
Additional preview pages of the SW830 datasheet.

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also l.

📁 Similar Datasheet

Other Datasheets by SAMWIN

Published: Aug 17, 2006 |