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SW830A Datasheet N-channel MOSFET

Manufacturer: SAMWIN

Datasheet Details

Part number SW830A
Manufacturer SAMWIN
File Size 827.97 KB
Description N-channel MOSFET
Download SW830A Download (PDF)

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.

Overview

SAMWIN SW830A N-channel MOSFET.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 1.5 Ω)@VGS=10V.
  • Gate Charge (Typ 19nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General.