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SW830 Datasheet N-Channel MOSFET

Manufacturer: SAMWIN

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Datasheet Details

Part number SW830
Manufacturer SAMWIN
File Size 859.08 KB
Description N-Channel MOSFET
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Overview

www.DataSheet4U.com SAMWIN General.

Key Features

  • N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also l.

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