Datasheet4U Logo Datasheet4U.com

SW830A - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 1.5 Ω)@VGS=10V.
  • Gate Charge (Typ 19nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet preview – SW830A

Datasheet Details

Part number SW830A
Manufacturer SAMWIN
File Size 827.97 KB
Description N-channel MOSFET
Datasheet download datasheet SW830A Datasheet
Additional preview pages of the SW830A datasheet.

📁 Similar Datasheet

Other Datasheets by SAMWIN
  • SW830 - N-Channel MOSFET
  • SW840 - N-Channel MOSFET
  • SW840A - N-channel MOSFET
  • SW8600 - Built-in high-voltage MOSFET
  • SW8601 - Built-in high-voltage MOSFET
  • SW8603 - Built-in high-voltage MOSFET
  • SW8604 - Built-in high-voltage MOSFET
  • SW88N60K2 - N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
Published: |