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SAMYANG ELECTRONICS

KBU3504 Datasheet Preview

KBU3504 Datasheet

SILICON BRIDGE RECTIFIERS

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SAMYANG ELECTRONICS KBU35005 --- KBU3510
SAM YANG
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 35.0A
FEATURES
Rating to 1000V PRV
Surge overload rating to 250 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
KBU
.933(23.7)
.894(22.7)
.160(4.1)
.140(3.6)
.700(17.8)
.760(19.3)Max .660(16.8)
+
+
.075(1.9)R.TYP.
_
(2 PLACES)
~ ~+
.185(4.7)
.165(4.2)
45 0
.085(2.2)
.065(1.7)
.455(11.3)
.405(10.3)
1.0(25.4)Min
.220(5.6)
.180(4.6)
.260(6.6)
.180(4.5)
.280(7.1)
.260(6.6)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
Dimensions in inches and (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @TA=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
KBU KBU
35005 3501
KBU KBU
3502 3504
KBU
3506
KBU
3508
KBU
3510
UNITS
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
V
V
V
IF(AV)
35.0
A
IFSM
VF
IR
TJ
TSTG
300.0
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
A
V
mA
www.diode.co.kr
1.




SAMYANG ELECTRONICS

KBU3504 Datasheet Preview

KBU3504 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES
KBU35005 --- KBU3510
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2 -- MAXIMUM FORWARD SURGE CURRENT
8
6
4
2 MOUNTES ON 4:4 INCH CPUFER
PC BOARD
0.5"(12.7mm) Lead length
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
250
225
200
175
150
125
100
75
1
2
8.3ms Single Half Sine Wave
TJ=125
5 10
20
50 100
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
40
20
10
4.0
2.0
1.0
TJ=25
Pulse Width
0.4 =300ยตS
0.2
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
10
TJ=100
1
.1
TJ=25
.01
0 20 40 60 80 100 120 140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER ELEMENT
400
TJ=25
100
50
10
1 10 100
REVERSE VOLTAGE, VOLTS
www.diode.co.kr
2.


Part Number KBU3504
Description SILICON BRIDGE RECTIFIERS
Maker SAMYANG ELECTRONICS
Total Page 2 Pages
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