HFS3N80 - 800V N-Channel MOSFET

SEMIHOW

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL.

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Published: May 9, 2014 |