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HFS3N80 Datasheet Preview

HFS3N80 Datasheet

800V N-Channel MOSFET

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Dec 2005
HFS3N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 4.0
ID = 3.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 17 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 4.0 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
1 21
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
3.0*
1.9*
12*
±30
320
3.0
3.9
4.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
39
0.31
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.2
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
◎ SEMIHOW REV.A0,Dec 2005
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SEMIHOW

HFS3N80 Datasheet Preview

HFS3N80 Datasheet

800V N-Channel MOSFET

No Preview Available !

Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 1.5 A
2.5
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 3.0 A,
RG = 25
(Note 4,5)
VDS = 640V, ID = 3.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 3.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 3.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
4.0 4.8
V
-- -- V
0.99 -- V/℃
-- 1
-- 10
-- 100
-- -100
700 910
70 90
79
20 40
55 110
30 60
40 80
17 22 nC
4.5 -- nC
7.5 -- nC
-- 3.0
-- 12
-- 1.4
650 --
5.2 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=67mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD3.0A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Dut ty Cycle 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Dec 2005


Part Number HFS3N80
Description 800V N-Channel MOSFET
Maker SEMIHOW
Total Page 7 Pages
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