SW100N10B
Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Key Features
- High ruggedness
- RDS(ON) (Max 10.5m Ω)@VGS=10V
- Gate Charge (Typ 106nC)
- Improved dv/dt Capability
- 100% Avalanche Tested 12 3
- Drain
- Source
