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SW1N60 Datasheet MOSFET

Manufacturer: SEMIPOWER

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Datasheet Details

Part number SW1N60
Manufacturer SEMIPOWER
File Size 690.92 KB
Description MOSFET
Download SW1N60 Download (PDF)

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.

Overview

SAMWIN SW1N60 N-channel MOSFET.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 12 Ω)@VGS=10V.
  • Gate Charge (Max 6nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General.

📁 Similar Datasheet

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Fairchild Semiconductor Logo SW1N60A SSW1N60A Fairchild Semiconductor
SAMWIN Logo SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET SAMWIN

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