SW1N60E Datasheet N-channel Enhanced mode TO-92/TO-251 MOSFET

Manufacturer: SEMIPOWER

SW1N60E n-channel enhanced mode to-92/to-251 mosfet by SEMIPOWER - Datasheet Preview

Datasheet Details

Part number	SW1N60E
Manufacturer	SEMIPOWER
File Size	684.67 KB
Description	N-channel Enhanced mode TO-92/TO-251 MOSFET
Datasheet	SW1N60E Datasheet

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

BVDSS : 600V ID : 1A RDS(ON) : 7.3Ω 2 1 3 Order Codes Item 1 2 Sales Type SW I 1N60E SW C 1N60E Marking SW 1N60E SW 1N60E Package TO-251 TO-92 Packaging TUBE TAPE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy (note 1) (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.

Overview

SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET.

Key Features

TO-92 TO-251.
High ruggedness.
Low RDS(ON) (Typ7.3Ω)@VGS=10V.
Low Gate Charge (Typ3.7nC).
Improved dv/dt Capability.
100% Avalanche Tested.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	SW1N60A	SSW1N60A	Fairchild Semiconductor
	SW1N60C	N-channel D-PAK/I-PAK/TO-92 MOSFET	SAMWIN

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