SW630A Key Features
- High ruggedness
- RDS(ON) (Max 0.4 Ω)@VGS=10V
- Gate Charge (Typ 22nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW630A
- Manufacturer: SEMIPOWER
- Size: 425.18 KB
Other SW630A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Samwin |
SW630 | N-Channel MOSFET |
| ISMARTWARE ISMARTWARE |
SW6301V | Single-C port multi-protocol step-up power bank SOC |
SW630A Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS.