Datasheet Details
| Part number | 1SS355 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 365.81 KB |
| Description | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| Datasheet |
 1SS355 Datasheet
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| Part number | 1SS355 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 365.81 KB |
| Description | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| Datasheet |
1SS355 Datasheet
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Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Isurge Tj Tstg Value 90 80 100 225 500 125 - 55 to + 125 Unit V V mA mA mA OC OC Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Ω Symbol VF IR CT trr Max.
1.2 0.1 3 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdi
1SS355 SILICON EPITAXIAL PLANAR SWITCHING DIODES.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS355 | Switching diode | Rohm |
 |
1SS355 | Silicon Epitaxial Planar Diode | GME |
 |
1SS355 | SURFACE MOUNT FAST SWITCHING DIODE | WON-TOP |
 |
1SS355 | FAST SWITCHING DIODE | JCET |
 |
1SS355 | SURFACE MOUNT FAST SWITCHING DIODE | LITE-ON |
| Part Number | Description |
|---|---|
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |