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1SS369 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Description

Cathode Anode 12 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temp

Features

  • Low forward voltage.
  • Low reverse current.

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Datasheet Details

Part number 1SS369
Manufacturer SEMTECH
File Size 172.03 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
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Full PDF Text Transcription

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1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current Applications • High Speed Switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at f = 1 MHz Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts Value 45 40 100 300 1 150 125 - 40 to + 100 - 55 to + 125 Unit V V mA mA A mW OC OC OC Symbol
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