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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS369
Low Voltage High Speed Switching
Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max)
1SS369
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage Reverse voltage
VRM VR
45 40
Maximum (peak) forward current IFM 300
Average forward current
IO 100
Surge current (10ms)
IFSM
1
Power dissipation
P * 150
Junction temperature
Tj 125
Storage temperature range
Tstg −55∼125
Operating temperature range
Topr −40∼100
* Mounted on a glass epoxy circuit board of 20 × 20 mm, Pad dimension of 4 × 4 mm.
Unit
V
V
mA
mA
A
mW
°C JEDEC
°C EIAJ °C TOSHIBA
― ― 1-1F1A
Weight: 1.
1SS369 Datasheet
