| Part number | 1SS369 |
|---|---|
| Datasheet | 1SS369_ToshibaSemiconductor.pdf |
| File Size | 131.94 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: Unit V V mA mA A mW °C JEDEC °C EIAJ °C TOSHIBA ― ― 1-1F1A Weight:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS369 | LOW VOLTAGE HIGH SPEED SWITCHING DIODE | Kexin |
 |
1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
| Part Number | Description |
|---|---|
| 1SS360 | Silicon Epitaxial Planar Type Diode |
| 1SS360F | Silicon Epitaxial Planar Type Diode |
| 1SS361 | Silicon Epitaxial Planar Type Diode |
| 1SS362 | Silicon Epitaxial Planar Type Diode |
| 1SS364 | Silicon Epitaxial Planar Type Diode |
| 1SS367 | Silicon Diode |
| 1SS368 | Silicon Epitaxial Planar Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
