1SS369 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS369 | LOW VOLTAGE HIGH SPEED SWITCHING DIODE |
SEMTECH |
1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: Unit V V mA mA A mW °C JEDEC °C EIAJ °C TOSHIBA ― ― 1-1F1A Weight:.
