1SS369
1SS369 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching
Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max)
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage Reverse voltage
VRM VR
45 40
Maximum (peak) forward current IFM 300
Average forward current
IO 100
Surge current (10ms)
IFSM
Power dissipation
- 150
Junction temperature
Tj 125
Storage temperature range
Tstg
- 55∼125
Operating temperature range
Topr
- 40∼100
- Mounted on a glass epoxy circuit board of 20 × 20 mm, Pad dimension of 4 × 4 mm.
Unit
V m A m A
A m W
°C JEDEC
°C EIAJ °C TOSHIBA
― ― 1-1F1A
Weight: 1.9mg
Electrical Characteristics (Ta = 25°C)
Characteristic
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