1SS369 - Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS369
Manufacturer	Toshiba Semiconductor
File Size	131.94 KB
Description	Diode
Datasheet	1SS369 Datasheet
Additional preview pages of the 1SS369 datasheet.

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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max) 1SS369 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage Reverse voltage VRM VR 45 40 Maximum (peak) forward current IFM 300 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P * 150 Junction temperature Tj 125 Storage temperature range Tstg −55∼125 Operating temperature range Topr −40∼100 * Mounted on a glass epoxy circuit board of 20 × 20 mm, Pad dimension of 4 × 4 mm. Unit V V mA mA A mW °C JEDEC °C EIAJ °C TOSHIBA ― ― 1-1F1A Weight: 1.

Published: Mar 23, 2005 |