Datasheet Details
| Part number | 1SS369 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 172.03 KB |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Datasheet | 1SS369-SEMTECH.pdf |
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Overview: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE.
| Part number | 1SS369 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 172.03 KB |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Datasheet | 1SS369-SEMTECH.pdf |
|
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Cathode Anode 12 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at f = 1 MHz Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts Value 45 40 100 300 1 150 125 - 40 to + 100 - 55 to + 125 Unit V V mA mA A mW OC OC OC Symbol VF IR CT Max.
0.6 5 25 Unit V µA pF SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS369 SEMTECH ELECTRONICS LTD.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS369 | Diode | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |