1SS389 Key Features
- Low forward voltage: VF = 0.23V (typ.) @IF=5mA
1SS389 is SILICON EPITAXIAL S CHOTTKY BARRIER DIODE manufactured by SEMTECH.
| Manufacturer | Part Number | Description |
|---|---|---|
| 1SS389 | Silicon Diode | |
LGE |
1SS389 | Schottky Barrier Diode |
Micro Commercial Components |
1SS389 | Switching Diode |
Kexin Semiconductor |
1SS389 | HIGH SPEED SWITCHING DIODE |
JCST |
1SS389 | SCHOTTKY BARRIER DIODE |
Cathode Anode 12 SW Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: Characteristics at T j = 25.