Datasheet Details
| Part number | 1SS389 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 199.93 KB |
| Description | Silicon Diode |
| Datasheet | 1SS389_ToshibaSemiconductor.pdf |
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Overview: TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.
| Part number | 1SS389 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 199.93 KB |
| Description | Silicon Diode |
| Datasheet | 1SS389_ToshibaSemiconductor.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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1SS389 | Schottky Barrier Diode | LGE |
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1SS389 | Switching Diode | MCC |
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1SS389 | HIGH SPEED SWITCHING DIODE | Kexin |
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1SS389 | SCHOTTKY BARRIER DIODE | JCST |
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1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE | SEMTECH |
| Part Number | Description |
|---|---|
| 1SS381 | Silicon diode |
| 1SS382 | Silicon diode |
| 1SS383 | Silicon diode |
| 1SS384 | Silicon diode |
| 1SS385 | Silicon diode |
| 1SS385F | Diode |
| 1SS387 | Diode |
| 1SS388 | Silicon Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |