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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS389
High Speed Switching Application
1SS389
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P*
15 V 10 V 200 mA 100 mA 1A 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS389 Datasheet
