Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF =...
- Part: 1SS389
- Description: Silicon Diode
- Manufacturer: Toshiba
- Size: 199.93 KB
Other 1SS389 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
LGE |
1SS389 | Schottky Barrier Diode |
Micro Commercial Components |
1SS389 | Switching Diode |
Kexin Semiconductor |
1SS389 | HIGH SPEED SWITCHING DIODE |
JCST |
1SS389 | SCHOTTKY BARRIER DIODE |
SEMTECH |
1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |