1SS388 Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.
1SS388 datasheet by Toshiba.
| Part number | 1SS388 |
|---|---|
| Datasheet | 1SS388_ToshibaSemiconductor.pdf |
| File Size | 375.37 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
|
|
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
![]() |
1SS388 | Silicon Epitaxial Schottky Barrier Type Diode | Pan Jit International |
![]() |
1SS388 | High Speed Switching Diode | LGE |
![]() |
1SS388 | Switching Diode | MCC |
![]() |
1SS388 | SCHOTTKY BARRIER DIODE | JCET |
| Part Number | Description |
|---|---|
| 1SS381 | Silicon Epitaxial Planar Type diode |
| 1SS382 | Silicon diode |
| 1SS383 | Silicon diode |
| 1SS384 | Silicon diode |
| 1SS385 | Silicon diode |
| 1SS385F | Diode |
| 1SS387 | Diode |
| 1SS389 | Silicon Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |