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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388
High Speed Switching Application
1SS388
Unit: mm
Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (Max.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM 300 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
―
Operating temperature range
Topr
−40 to 100
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
1SS388 Datasheet
