The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
1SS385F
Unit in mm
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM VR IFM IO IFSM P
Tj Tstg Topr
15 10 200 (*) 100 (*) 1 (*) 100 125 −55∼125 −40∼100
*: Unit rating. Total rating = unit rating × 1.
1SS385F Datasheet
