1SS385F Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: Unit ― 0.18 ― V ― 0.23 0.30 V ― 0.35 0.50 V ― ― 20 µA ― 20 40 pF Equivalent Circuit (Top View) Marking 961001EAA2 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their...