1SS385FV Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Ratings (Ta = 25°C) 0.22±0.05 Unit: CATHODE Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note:.