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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
1 23
0.32±0.05
1.2±0.05 0.8±0.05 0.4 0.4
Characteristic
Symbol
Rating
Unit
0.13±0.05
Maximum (peak) reverse voltage
VRM
15 V
0.5±0.05
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current Surge current (10 ms) Power dissipation Junction temperature
IO IFSM
P Tj
100 * 1*
150** 125
mA A mW °C
VESM
1. ANODE 1 2. ANODE 2 3.
1SS385FV Datasheet
