The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
1SS385
Unit: mm
z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
15 10 200 * 100 * 1* 100
V V mA mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS385 Datasheet
