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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS382
Ultra High Speed Switching Application
Small package
Composed of 2 independent diodes.
Low forward voltage
: VF (3) = 0.92 V (typ.)
Fast reverse recovery time : trr = 1.6 ns (typ.)
1SS382
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
PD (Note 1, 3)
125
mW
PD (Note 2, 3)
100
Junction temperature
Tj (Note 1)
150
°C
Tj (Note 2)
125
Storage temperature
Tstg (Note 1) −55 to 150 °C
Tstg (Note 2) −55 to 125
JEDEC
―
JEITA
―
TOSHIBA
1-2U1A
Weight: 0.006g (typ.
1SS382 Datasheet
